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3D Vertical NAND Flash Memory Technology, January 2015
(Roadmap, Product, Technology, Process, Design, Modeling, Test, Reliability)

The first monolithic 3D IC's to make it into production are the 3D NAND flash devices. The 30 billion dollar NAND Flash market targets systems using Solid State Drives such as car navigation systems, industrial equipment, digital video recorders. tablet computers, USB keys, and smart cards, as well as enterprise and handheld computers. Early development of 3D NAND Flash began with Toshiba in 2007 with their bit cost scalable (BiCS) technology for vertical channel (VC) change trapping (CT) NAND Flash and by Samsung with a series of technologies culminating in 2009 in their terabit cell array transistor (TCAT) VC CT NAND Flash. First into production was Samsung who announced in 2013 the inclusion in their own SSD of a first generation 24-layer V-NAND device derived from their earlier TCAT technology. Then in May of 2014 Samsung announced open production of a larger 32 layer V-NAND. Toshiba has announced early production of their 3D VC CT BiCS NAND Flash to begin in 2015 from an existing fab and full production in 2016, if market conditions are favorable, from a new fab which is being built for the 3D NAND flash. While early production is assumed to be of the 3D VC CT BiCS device, they also had an interesting study in 2013 of a stacked horizontal channel (HC) floating gate (FG) 3D NAND flash device. SK Hynix showed a series of studies from 2011 to 2013 on 3D VC FG NAND Flash. They also did a study in 2014 of the relative benefits of charge trapping vs. floating gate 3D NAND flash. In 2014 Hynix discussed a prototype of a VC CT gate-last device using gate replacement. Macronix has produced a volume of technical papers on their 3D horizontal channel/vertical gate HC CT NAND Flash as it has moved through development. Their most recent test product is a 3D NAND flash in bit-alterable technology and their most recent studies are on test, reliability and other production issues but they have not announced a roadmap for production. Recently Intel and Micron have indicated that a 3D VC CT NAND flash will be introduced in the 2015 time frame. Meanwhile the planar NAND Flash devices continue in intensive development. A full change from 2D to 3D NAND depends on the cost-cross-over but the products are expected to co-exist for several years. A tentative roadmap for 2D and 3D NAND Flash is shown in the following figure where the 2D versions are in pink and the 3D versions in yellow. It can be assumed that this is not the final version of this roadmap.  80+ pages.

Memory Strategies 3D NAND Flash Roadmap

 

DESCRIPTION | TO ORDER

3D Vertical NAND Flash Memory Technology
(Roadmap, Product, Technology, Process, Design, Modeling, Test, Reliability)
January 2015

Table of Contents

Executive Overview:

1.0 Overview and Roadmap of 3D Vertical NAND Flash

2.0 Vertical Channel Charge Trapping NAND Flash Technology

3.0 Vertical Channel Floating Gate 3D NAND Flash

4.0 3-D Horizontal-Channel/Vertical-Gate Charge Trapping NAND Flash

5.0 Horizontal Channel Floating Gate 3D NAND Flash

6.0 Stacked Single Crystal Silicon NW (CSTAR) 3D NAND Flash Array

7.0 Junctionless Nanowire for 3D CT Memory

8.0 Reliability, Modeling and Test of 3D NAND Flash

9.0 Design of Systems Using 3D VC NAND Flash

Bibliography

DESCRIPTION | CONTENTS

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(Roadmap, Product, Technology, Process, Design, Modeling, Test, Reliability), January 2015

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